Electronic transport in porous silicon of low porosity made on a p+ substrate

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 69, Issue , 2000, Pages 127-131

  Balagurov, L A ^a   Yarkin, D G ^a   Petrova, E A ^a  

^a INSTITUTE OF RARE METALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; DISSOCIATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC IMPEDANCE MEASUREMENT; ELECTRIC SPACE CHARGE; ELECTRON TRANSPORT PROPERTIES; PASSIVATION; POROUS SILICON; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING;

ENERGY DISTRIBUTION DENSITY; METAL-POROUS SILICON JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0033908537     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00230-5     Document Type: Article

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