Electrical barrier properties of meso-porous silicon

Materials Science and Engineering: B

Volumn 101, Issue 1-3, 2003, Pages 313-317

  Remaki, B ^a   Populaire, C ^a   Lysenko, V ^a   Barbier, D ^a  

^a UNIVERSITÉ DE LYON   (France)

Author keywords

Electrical characterization; Electronics transport; Porous silicon

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC IMPEDANCE; ELECTRIC INSULATING COATINGS; ELECTRIC SPACE CHARGE; MESOPOROUS MATERIALS; POSITIVE IONS; SCHOTTKY BARRIER DIODES; THERMAL EFFECTS;

ELECTRICAL CHARACTERIZATION; ELECTRONICS TRANSPORT;

POROUS SILICON;

EID: 1642393962     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00731-6     Document Type: Conference Paper

References (18)

1. Canham L.T. Appl. Phys. Lett. 57:1990;1046.
2. Cullis A.G., Canham L.T., Calcot P.D.J. J. Appl. Phys. 82:1997;909.
3. Bomchil G., Halimaoui A., Herino R. Microelectron. Eng. 8:1988;293.
4. Halimaoui A. Vial J.-C., Derrien J. Porous Silicon: Science and Technology. 1995;33 Springer, Les Editions de Physique, Berlin, Heidelberg, and Les Ulis.
5. See for a complete revue, properties of porous silicon, edited by L.T. Canham, Emis 18, Inspec, UK, 1997.
6. Steiner P., Lang W. Thin Solid Films. 255:1995;52.
7. Roussel P., Lysenko V., Remaki B., Delhomme G., Dittmar A., Barbier D. Sens. Actuators A. 74:1999;100.
8. Lysenko V., Perichon S., Remaki B., Champagnon B., Barbier D. J. Appl. Phys. 86:1999;6841.
9. Lehman V., Hofmann H., Möller F., Gruning U. Thin Solid Films. 255:1995;20.
10. Polissiki I.G., Kovalev D., Dollinger G., Sulima T., Koch G. Physica B. 273:1999;951.
11. Ben Chorin M., Möller F., Koch F., Schirmacher W., Eberhard M. Phys. Rev. B. 4:1995;2199.
12. Chen Z., Lee T.-Y., Bosman G. J. Appl. Phys. 76:1994;2499.
13. Timoshenko V.Y., Kashkarov P.K., Matveeva A.B., Konstantinova E.A., Flietner H., Dittrich T. Thin Solid Films. 276:1996;216.
14. Balagurov L.A., Bayliss S.C., Orlov A.F., Petrova E.A., Unal B., Yarkin D.G. J. Appl. Phys. 90:2001;4184.
15. Gutmann F., Lyons L.E. Organic Semiconductors. 1967;Wiley, New York.
16. A.J. Simons, in: Properties of Porous Silicon, edited by L.T. Canham, Emis 18, Inspec, UK 176, 1997.
17. Remaki B., Guillaud G., Mayes D. Opt. Mater. 9:1998;240.
18. Sze S.M. Physics of Semiconductor Devices. 1981;Wiley, New York.