Electron irradiation of 4H SiC by TEM: An optical study

Materials Research Society Symposium - Proceedings

Volumn 640, Issue , 2001, Pages

  Sridhara, S G ^a   Persson P O A ^a   Carlsson, F H C ^a   Bergman, J P ^a   Janzen E ^a   Evans, G ^a   Steeds, J W ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CARBON; ELECTRON IRRADIATION; ION IMPLANTATION; NEUTRON IRRADIATION; NITROGEN; PHOTOLUMINESCENCE; PROTON IRRADIATION; SECONDARY ION MASS SPECTROMETRY; SPECTRUM ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

ISOELECTRONIC CENTER; SILICON CARBIDE EPIWAFER;

SILICON CARBIDE;

EID: 9744236054     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)