Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 371-374

  David, M L ^a,b   Alfieri, G ^a   Monakhov, E V ^a   Hallen A ^c   Barbot, J F ^b   Svensson, B C ^a,c  

^a UNIVERSITY OF OSLO   (Norway)

^b UNIVERSITÉ DE POITIERS   (France)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

4H SiC; DLTS; Ion Implantation; S Center

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); ION IMPLANTATION; POINT DEFECTS;

CONDUCTION BAND;

SILICON CARBIDE;

EID: 0242413713     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.371     Document Type: Conference Paper

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