Adsorption sites of Te on Si(0 0 1)

Surface Science

Volumn 561, Issue 2-3, 2004, Pages 248-260

  Lyman, P F ^a,b   Walko, D A ^a,c   Marasco, D L ^a   Hutchason, H L ^a   Keeffe, M E ^a   Montano, P A ^c,d   Bedzyk, M J ^a,c  

^a Northwestern University   (United States)

^b UNIVERSITY OF WISCONSIN MILWAUKEE   (United States)

^c ARGONNE NATIONAL LABORATORY   (United States)

^d UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

Chalcogens; Low energy electron diffraction (LEED); Low index single crystal surfaces; Silicon; Surface structure, morphology, roughness, and topography; Thermal desorption spectroscopy; X ray standing waves

Indexed keywords

ADSORPTION; COMPUTER SIMULATION; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR DYNAMICS; MORPHOLOGY; SINGLE CRYSTALS; SURFACE CHEMISTRY; SURFACE ROUGHNESS; SURFACE STRUCTURE; TELLURIUM; TEMPERATURE PROGRAMMED DESORPTION;

CHALCOGENS; LOW INDEX SINGLE CRYSTAL SURFACES; THERMAL DESORPTION SPECTROSCOPY; X-RAY STANDING WAVES;

SILICON;

EID: 3042803563     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.05.071     Document Type: Article

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