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Volumn 408, Issue 1-3, 1998, Pages 268-274

Adsorption structures of Te on Si(001) surface observed by low energy electron diffraction

(5) Tamiya, K a Ohtani, T a Takeda, Y a Urano, T a Hongo, S a

Author keywords

Auger electron spectroscopy (AES); Low energy electron diffraction (LEED); Metal semiconductor interfaces; Si(001) surface; Tellurium; Thermal desorption spectroscopy (TDS); Vicinal single crystal surfaces

Indexed keywords

ADSORPTION; CRYSTAL ATOMIC STRUCTURE; DEPOSITION; DESORPTION; LOW ENERGY ELECTRON DIFFRACTION; MONOLAYERS; SEMICONDUCTING SILICON; SEMICONDUCTING TELLURIUM; SINGLE CRYSTALS; SURFACE STRUCTURE; THERMAL EFFECTS;

THERMAL DESORPTION SPECTROSCOPY (TDS); VICINAL SINGLE CRYSTALS;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0032097207 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(98)00250-7 Document Type: Article

Times cited : (13)

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