Photoemission studies of the surfactant-aided growth of Ge on Te-terminated Si(100)

Surface Science

Volumn 380, Issue 2-3, 1997, Pages 178-189

  Bennett, M R ^b   Dunscombe, C J ^a   Cafolla, A A ^c   Cairns, J W ^d   Macdonald, J E ^a   Williams, R H ^e  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c DUBLIN CITY UNIVERSITY   (Ireland)

^d DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

^e SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

Germanium; Low energy electron diffraction (LEED); Silicon; Single crystal epitaxy; Soft X ray photoelectron spectroscopy; Surface structure, morphology, roughness, and topography; Tellurium; X ray photoelectron spectroscopy

Indexed keywords

CRYSTAL GROWTH; CRYSTAL LATTICES; CRYSTAL ORIENTATION; FREE ENERGY; LOW ENERGY ELECTRON DIFFRACTION; PHOTOEMISSION; SCANNING TUNNELING MICROSCOPY; SILICON; SINGLE CRYSTALS; SURFACE ACTIVE AGENTS; TELLURIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

SOFT X RAY PHOTOELECTRON SPECTROSCOPY (SXPS);

GERMANIUM;

EID: 0031140092     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01149-1     Document Type: Article

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