XPS, LEED and AFM investigation of the Si(100) surface after the deposition and annealing of tellurium thin films

Surface Science

Volumn 352-354, Issue , 1996, Pages 1027-1032

  Santucci, S ^a   Di Nardo, S ^a   Lozzi, L ^a   Passacantando, M ^a   Picozzi, P ^a  

^a UNIVERSITY OF L'AQUILA   (Italy)

Author keywords

Atomic force microscopy; Low index single crystal surfaces; Silicon; Single crystal epitaxy; Surface roughening; Surface structure, morphology, roughness, and topography; Tellurium

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL BONDS; DEPOSITION; EVAPORATION; LOW ENERGY ELECTRON DIFFRACTION; MORPHOLOGY; SILICON; TELLURIUM; THERMAL EFFECTS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

PICTURESQUE MORPHOLOGY; SILICON SUBSTRATE; SILICON SURFACE; TELLURIUM THIN FILMS;

SURFACE STRUCTURE;

EID: 0030142490     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01321-0     Document Type: Article

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