STM study of the Te/Si(100) interface

Applied Surface Science

Volumn 142, Issue 1, 1999, Pages 475-480

  Wiame, F ^a   Mathot, G ^a   Sivananthan, S ^b   Rujirawat, S ^b   Caudano, R ^a   Sporken, R ^a  

^a UNIVERSITY OF NAMUR   (Belgium)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL DEFECTS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING SILICON; STRUCTURE (COMPOSITION); SURFACE TREATMENT; TELLURIUM; X RAY CRYSTALLOGRAPHY;

DOUBLE CRYSTAL X RAY DIFFRACTION; ELEVATED TEMPERATURE;

SCANNING TUNNELING MICROSCOPY;

EID: 0032686770     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00686-2     Document Type: Article

References (16)

1. Yoo S.S., Rodricks B., Faurie J.P., Sivananthan S., Montano P.A. J. Cryst. Growth. 159:1996;906.
2. Faurie J.P., Almeida L.A., Chen Y.P., Sporken R., Sivananthan S. SPIE Proc. 2685:1996;28.
3. Sporken R., Sivananthan S., Mahavadi K.K., Monfroy G., Boukerche M., Faurie J.P. Appl. Phys. Lett. 55:1989;1879.
4. Bennett M.R., Cafolla A.A., Cairns J.W., Dunscombe C.J., Williams R.H. Surf. Sci. 360:1996;187.
5. Burgess S.R., Cowie B.C.C., Wilks S.P., Dunstan P.R., Dunscombe C.J., Williams R.H. Appl. Surf. Sci. 104-105:1996;152.
6. Sporken R., Malengreau F., Ghijsen J., Caudano R., Sivananthan S., Faurie J.-P., van Gemmeren T., Johnson R.L. Appl. Surf. Sci. 123-124:1998;462.
7. Sporken R., Malengreau F., Chen Y.P., van Gemmeren T., Ghijsen J., Sivananthan S., Caudano R., Faurie J.-P., Johnson R.L. Physicalia Mag. 18:1996;21.
8. Hamers R.J., Tromp R.M., Demuth J.E. Phys. Rev. B. 34:1986;5343.
9. Tromp R.M., Hamers R.J., Demuth J.E. Phys. Rev. Lett. 55:1985;1303.
10. Kochanski G.P., Griffith J.E. Surf. Sci. 249:1991;L293.
11. Batra I.P. Phys. Rev. B. 41:1990;5048.
12. Yoshikawa S.A., Nogami J., Quate C.F., Pianetta P. Surf. Sci. 321:1994;L183.
13. Sporken R., Chen Y.P., Sivananthan S., Lange M.D., Faurie J.P. J. Vac. Sci. Technol. B. 10:1992;1405.
14. Cohen-Solal G., Bailly F., Barbé M. Appl. Phys. Lett. 49:1986;1519.
15. Harrison W.A. J. Vac. Sci. Technol. 16:1979;1492.
16. Whitman L.J., Thibado P.M., Erwin S.C., Bennett B.R., Shanabrook B.V. Phys. Rev. Lett. 79:1997;693.