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Volumn 123-124, Issue , 1998, Pages 462-466

Si 2p core-level shifts at the CdTe/Si(100) interface

(8) Sporken, R a Malengreau, F a Ghijsen, J a Caudano, R a Sivananthan, S b Faurie, J P b Van Gemmeren, T c Johnson, R L c

a UNIVERSITY OF NAMUR (Belgium)

b UNIVERSITY OF ILLINOIS AT CHICAGO (United States)

c UNIVERSITY OF HAMBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE STRUCTURE; SYNCHROTRON RADIATION;

ADATOMS;

SILICON WAFERS;

EID: 0031683314 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)00486-8 Document Type: Article

Times cited : (11)

References (13)

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