Single-electron transistors fabricated from a doped-Si film in a silicon-on-insulator substrate

Applied Physics Letters

Volumn 72, Issue 7, 1998, Pages 795-796

  Sakamoto, T ^a   Kawaura, H ^a   Baba, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001664590     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120896     Document Type: Article

References (10)

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