Single-electron transistors with point contact channels

Nanotechnology

Volumn 13, Issue 2, 2002, Pages 221-225

  Wang, T H ^a   Li, H W ^a   Zhou, J M ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE; ELECTRIC POTENTIAL; ELECTRON TUNNELING; OSCILLATIONS; POINT CONTACTS; SILICON ON INSULATOR TECHNOLOGY; TRANSISTORS;

SINGLE-ELECTRON TRANSISTORS (SET);

NANOTECHNOLOGY;

EID: 0036540931     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/13/2/317     Document Type: Article

References (15)