Electroluminescence of In0.53Ga0.47As/GaAs0.5Sb0.5 type II multiple quantum well diodes lattice-matched to InP

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 294-297

  Takasaki, H ^a   Kawamura, Y ^a   Katayama, T ^a   Yamamoto, A ^a   Inoue, N ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting III V materials; B3. Light emitting diodes

Indexed keywords

CRYSTAL LATTICES; ELECTRIC CURRENTS; ELECTROLUMINESCENCE; HETEROJUNCTIONS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

GALLIUM ARSENIC ANTIMONIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 18244414032     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00708-4     Document Type: Conference Paper

References (6)