NbO as gate electrode for n-channel metal-oxide-semiconductor field-effect-transistors

Applied Physics Letters

Volumn 84, Issue 23, 2004, Pages 4666-4668

  Gao, W ^a   Conley Jr , J F ^a   Ono, Y ^a  

^a SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION (ALD); CAPACITIVE EQUIVALENT THICKNESS (CET); GATE ELECTRODES; NBO;

ANNEALING; CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRODES; GATES (TRANSISTOR); MAGNETRON SPUTTERING; MOSFET DEVICES; OXIDATION; POLYSILICON; SPUTTER DEPOSITION; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE; X RAY DIFFRACTION ANALYSIS;

NIOBIUM COMPOUNDS;

EID: 3042767334     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1759780     Document Type: Article

References (15)

1. B. Cheng, B. Maiti, S. Samavendam, J. Grant, B. Taylor, P. Tobin, and J. Mogab, IEEE International Silicon on Insulator Conference, 1-4 October 2001, Durango, CO, pp. 91, 92.
2. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
3. H. Zhong, S.-N. Hong, Y.-S. Suh, H. Lazar, G. Heuss, and V. Misra, Tech. Dig. - Int. Electron Devices Meet. 2001, 467.
4. P. Ranade, Y. K. Choi, D. Ha, A. Agarwal, M. Ameen, and T. J. King, Tech. Dig. - Int. Electron Devices Meet. 2002, 363.
5. K. Kukli, M. Ritala, and M. Leskela, J. Electrochem. Soc. 148, F35 (2001).
6. Z. W. Fu, J. J. Kong, and Q. Z. Qin, J. Electrochem. Soc. 146, 3914 (1999).
7. C. I. Wilson, C. R. Ellis, L. S. Salinas, and A. W. Lichtenberger, IEEE Trans. Appl. Supercond. 9, 1724 (1999).
8. R. Pretorius, J. M. Harris, and M. A. Nicolet, Solid-State Electron. 21, 667 (1978).
9. R. C. Lee and C. R. Aita, J. Appl. Phys. 70, 2094 (1991).
10. R. C. Lee and C. R. Aita, J. Vac. Sci. Technol. A 10, 1777 (1992).
11. P. Jain, V. Bhagwat, E. J. Rymaszewski, T. M. Lu, S. Berg, and T. S. Cale, J. Appl. Phys. 93, 3596 (2003).
12. W. Gao, J. F. Conley, Jr., and Y. Ono, Proceedings of 204th Meeting of the Electrochemical Society, Orlando, FL, 12-16 October 2003.
13. J. F. Conley, Jr., Y. Ono, R. Solanki, G. Stecker, and W. Zhuang, Appl. Phys. Lett. 82, 3508 (2003).
14. E. P. Gusev, D. A. Buchanan, E. Cartier, A. Kumar, D. DiMaria, S. Guha, A. Callegari, S. Zafar, P. C. Jamison, D. A. Neumayer, M. Copel, M. A. Gribelyuk, H. Okorn-Schmidt, C. D'Emic, P. Kozlowski, K. Chan, N. Bojarczuk, L.-Å. Ragnarsson, P. Ronsheim, K. Rim, R. J. Fleming, A. Mocutaand, and A. Ajmera, Tech. Dig. - Int. Electron Devices Meet. 2001, 451.
15. S. B. Samavedam, L. B. La, P. J. Tobin, B. White, C. Hobbs, L. R. C. Fonseca, A. A. Demkov, J. Schaeffer, E. Luckowski, A. Martinez, M. Raymond, D. Triyoso, D. Roan, V. Dhandapani, R. Garcia, S. G. H. Anderson, K. Moore, H. H. Tseng, C. Capasso, O. Adetutu, D. C. Gilmer, W. J. Taylor, R. Hegde, and J. Grant, Tech. Dig. - Int. Electron Devices Meet. 2003, 307.