A study of GaN etching characteristics using HBr-based inductively coupled plasmas

Solid-State Electronics

Volumn 47, Issue 3, 2003, Pages 549-552

  Kim, D W ^a   Jeong, C H ^a   Lee, H Y ^a   Kim, H S ^a   Sung, Y J ^b   Yeom, G Y ^a  

^a Sungkyunkwan University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

BCl3 HBr; Etch profile; GaN; OES; Photoresist mask

Indexed keywords

EMISSION SPECTROSCOPY; ETCHING; HYDROGEN INORGANIC COMPOUNDS; INDUCTIVELY COUPLED PLASMA; PHOTORESISTS;

ETCH SELECTIVITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037345474     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00411-2     Document Type: Conference Paper

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