Initial stages of cubic GaN growth on the GaAs(001) surface studied by scanning tunneling microscopy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 11 SUPPL. B, 1997, Pages

  Xue, Qi Kun ^a   Xue, Qi Zhen ^a   Hasegawa, Yukio ^a   Tsong, Ignatius S T ^a,b   Sakurai, Toshio ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Etching; GaAs; GaN; Molecular beam epitaxy; Nitrides; RF plasma; Scanning tunneling microscopy; Surface reconstruction

Indexed keywords

CRYSTAL GROWTH; ETCHING; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NANOSTRUCTURED MATERIALS; PLASMA SOURCES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; SURFACE TREATMENT;

GALLIUM NITRIDE; RADIO FREQUENCY PLASMAS; SURFACE RECONSTRUCTION;

NITRIDES;

EID: 0031276719     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1486     Document Type: Article

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