Surface potential imaging on InAs low-dimensional nanostructures studied by Kelvin probe force microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 7 B, 2003, Pages 4869-4873

  Öno, Shiano ^a   Takeuchi, Misaichi ^b   Noda, Takeshi ^a   Takahashi, Takuji ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

Cyclic contact; Electric field; InAs; Kelvin probe force microscopy (KFM); Noncontact; Quantum dot; Thin film; Wire

Indexed keywords

ELECTRIC FIELDS; FERMI LEVEL; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; SURFACES; THIN FILMS;

ELECTRIC FIELD DISTRIBUTION; ELECTRON CONFINEMENT EFFECT; INDIUM ARSENIDE; KELVIN PROBE FORCE MICROSCOPY; SELF-ASSEMBLED QUANTUM DOT;

MICROSCOPIC EXAMINATION;

EID: 3042614743     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.4869     Document Type: Article

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