Kelvin probe force microscopy on in as thin films on (110) GaAs substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 6 B, 2000, Pages 3721-3723

  Takahashi, Takuji ^a,b   Kawamukai, Takashi ^a   Ono, Shiano ^a   Noda, Takeshi ^b   Sakaki, Hiroyuki ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Electron accumulation; Fermi level; Kelvin probe force microscopy; Quantum confinement; Surface potential

Indexed keywords

BAND STRUCTURE; ELECTRIC POTENTIAL; FERMI LEVEL; FILM GROWTH; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE TOPOGRAPHY; THIN FILMS;

INDIUM ARSENIDE; KELVIN PROBE FORCE MICROSCOPY; QUANTUM CONFINEMENT EFFECTS; SURFACE POTENTIAL DISTRIBUTIONS;

SEMICONDUCTING FILMS;

EID: 0034207425     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.3721     Document Type: Article

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