Evolution of T-shaped gate lithography for compound semiconductors field-effect transistors

IEEE Transactions on Semiconductor Manufacturing

Volumn 16, Issue 3, 2003, Pages 365-369

  Tabatabaie Alavi, Kamal ^a   Shaw, Dale M ^a   Duval, Paul J ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

Field effect transistor; GaAs; T shaped gate

Indexed keywords

COPOLYMERS; ELECTRON BEAM LITHOGRAPHY; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); OPTIMIZATION; PHOTORESISTS; POLYMETHYL METHACRYLATES; SEMICONDUCTING GALLIUM ARSENIDE;

CRITICAL DIMENSION CONTROL; T-SHAPED GATE LITHOGRAPHY;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0041385602     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2003.815632     Document Type: Article

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