Two concerns about NBTI issue: Gate dielectric scaling and increasing gate current

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 28-34

  Tsujikawa, Shimpei ^a   Akamatsu, Yasuhiko ^a   Umeda, Hiroshi ^a   Yugami, Jiro ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DIELECTRIC DEVICES; DIFFUSION; ELECTRODES; ELECTRON TRAPS; ELECTRON TUNNELING; MATHEMATICAL MODELS; NUMERICAL METHODS; QUANTUM THEORY; REACTION KINETICS; STRESSES; THRESHOLD VOLTAGE;

ELECTRON CURRENT; GATE CURRENT; GATE DIELECTRIC SCALING; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI);

MOSFET DEVICES;

EID: 3042565046     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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