Application of rapid joule heating method to fabrication of polycrystalline silicon thin film transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 9 A, 2003, Pages 5461-5464

  Sameshima, Toshiyuki ^a   Kaneko, Yoshiyasu ^a   Andoh, Nobuyuki ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Crystallization; Defect; Joule heating; Mobility; Poly Si; TFT

Indexed keywords

CARRIER MOBILITY; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY OF SOLIDS; GRAIN SIZE AND SHAPE; POLYCRYSTALLINE MATERIALS; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS; RAPID HEAT DIFFUSION; RAPID JOULE HEATING METHOD;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0344925613     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.5461     Document Type: Article

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