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Volumn 15, Issue 12, 2005, Pages 862-864

A monolithically integrated 190-GHz SiGe push - Push oscillator

Author keywords

Heterojunction bipolar transistor (HBT); Millimeter wave integrated circuits; Monolithic microwave integrated circuit (MMIC) oscillators; SiGe heterojunction bipolar transistor (HBT)

Indexed keywords

MILLIMETER WAVE INTEGRATED CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUIT (MMIC) OSCILLATOR; SIGE (HBT);

EID: 30344480204     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2005.859996     Document Type: Article
Times cited : (38)

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    • Baeyens, Y.1    Chen, Y.2
  • 7
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    • May
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  • 8
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    • Dec.
    • Y. Kwon, D. Pavlidis, T. Brock, and D. Streit, "A D-band monolithic fundamental oscillator using InP-based HEMT's," IEEE Trans. Microw. Theory Tech., vol. 41, no. 12, pp. 2336-2344, Dec. 1993.
    • (1993) IEEE Trans. Microw. Theory Tech. , vol.41 , Issue.12 , pp. 2336-2344
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  • 13
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    • Bender, J.R.1    Wong, C.2
  • 14
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    • A 20-40-GHz push-push dielectric resonator oscillator
    • Dec.
    • A. M. Pavio and M. A. Smith, "A 20-40-GHz push-push dielectric resonator oscillator," IEEE Trans. Microw. Theory Tech., vol. 33, pp. 1346-1349, Dec. 1985.
    • (1985) IEEE Trans. Microw. Theory Tech. , vol.33 , pp. 1346-1349
    • Pavio, A.M.1    Smith, M.A.2
  • 15
    • 0037292309 scopus 로고    scopus 로고
    • Hybrid millimeter-wave push-push oscillators using silicon-germanium HBTs
    • Feb.
    • F. Sinnesbichler, "Hybrid millimeter-wave push-push oscillators using silicon-germanium HBTs," IEEE Trans. Microw. Theory Tech., vol. 51, no. 2, pp. 422-430, Feb. 2003.
    • (2003) IEEE Trans. Microw. Theory Tech. , vol.51 , Issue.2 , pp. 422-430
    • Sinnesbichler, F.1
  • 16
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    • A fully integrated 70 GHz SiGe low phase noise push-push oscillator
    • Jun. 13-16
    • R. Wanner, H. Schäfer, R. Lachner, G. R. Olbrich, and P. Russer, "A fully integrated 70 GHz SiGe low phase noise push-push oscillator, " in IEEE MTT-S Int. Dig., Jun. 13-16, 2005, pp. 1523-1526.
    • (2005) IEEE MTT-S Int. Dig. , pp. 1523-1526
    • Wanner, R.1    Schäfer, H.2    Lachner, R.3    Olbrich, G.R.4    Russer, P.5
  • 17
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    • M. Rickelt and H.-M. Rein, "A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits," IEEE J. Solid-State Circ., vol. 37, no. 9, pp. 1184-1197, Sep. 2002.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.