LC-oscillators above 100 GHz in silicon-based technology

ESSCIRC 2004 - Proceedings of the 30th European Solid-State Circuits Conference

Volumn , Issue , 2004, Pages 131-134

  Winkler, Wolfgang ^a   Borngräber, Johannes ^a   Heinemann, Bernd ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CMOS INTEGRATED CIRCUITS; FREQUENCIES; LOGIC DESIGN; SILICON; SUBSTRATES; TUNING; VARIABLE FREQUENCY OSCILLATORS;

BEAM FORMING; FREQUENCY ENERGY; METAL LAYERS; SINGLE LOOP;

OSCILLATORS (ELECTRONIC);

EID: 17644398810     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. H. Li, H.-M. Rein, "SiGe VCOs for operating up to 88 GHz, suitable for automotive radar sensors", Electronics Letters, Sept. 2003, Vol.39, No. 18, p. 1326.
2. W.Winkler et al., "60 GHz and 76 GHz oscillators in 0.25 μm SiGe:C BiCMOS", IEEE Int. Solid-State Circuits Conf., February 2003, pp. 454-455.
3. W. Perndl et al., "A 98 GHz voltage controlled oscillator in SiGe bipolar technology", Bipolar/BiCMOS Circuits and Technology Meeting, Digest of Technical Papers, Sept. 2003, pp. 67-69.
4. B. Heinemann et al., "Novel Collector Design for High-Speed SiGe:C HBTs", IEDM 2002, p. 775-778.
5. W. Winkler, J. Borngräber, B. Heinemann, "A 117 GHz LC-Oscillator in SiGe:C BiCMOS Technology," International SiGe Technology and Device Meeting, ISTDM 2004, Frankfurt (Oder), Germany, May 2004, accepted for publication.