Atomistic processes during nanoindentation of amorphous silicon carbide

Applied Physics Letters

Volumn 86, Issue 2, 2005, Pages

  Szlufarska, Izabela ^a   Kalia, Rajiv K ^b   Nakano, Aiichiro ^b   Vashishta, Priya ^b  

^a University of Wisconsin Madison   (United States)

^b Dept Phys Dept Comp Sci U ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON CARBIDE; ATOMISTIC PROCESSES; MOLECULAR DYNAMICS SIMULATION; NANOINDENTATION;

AMORPHOUS MATERIALS; CHEMICAL BONDS; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; CRYSTALLOGRAPHY; HARDNESS; INDENTATION; MOLECULAR DYNAMICS; PLASTIC DEFORMATION;

SILICON CARBIDE;

EID: 19744382917     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1849843     Document Type: Article

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