Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 5, 2005, Pages 749-753

  Yun, F ^a   Fu, Y ^a   Moon, Y T ^a   Ozgur U ^a   Xie, J Q ^a   Dogan S ^a,d   Morkoc H ^a   Inoki, C K ^b   Kuan, T S ^b   Zhou, L ^c   Smith, D J ^c  

^a Virginia Commonwealth University   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

^d ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

IN SITU NITRIDATION; POROUS NETWORKS; ROOM TEMPERATURE; THREADING DISLOCATIONS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; POROSITY; TEMPERATURE DISTRIBUTION; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE;

EID: 25444504513     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200461552     Document Type: Conference Paper

References (8)

1. H. Morkoç, Nitride Semiconductors and Devices (Springer Verlag, 1999), second edition in press.
2. M. A. Reshchikov and H. Morkoç, Defects in GaN: Optical Signature, J. Appl. Phys. Rev., under review.
3. See for example, P. Gibart, B. Beaumont, and P. Vennéguès, Epitaxial Lateral Overgrowth of GaN, in: Nitride Semiconductors, Handbook on Materials and Devices, edited by P. Ruterana, M. Albrecht, and J. Neugebauer (Wiley-VCH, Weinheim, 2003), ISBN: 3-527-40387-6, Chapt. 2.
4. S. Haffouz, B. Beaumont, P. Vennegues, and P. Gibart, phys. stat. sol. (a) 176, 677 (1999).
5. S. Sakai, T. Wang, Y. Morishima, and Y. Naoi, J. Cryst. Growth 221, 334 (2000).
6. Y. Oshima, T. Eri, M. Shibata, H. Sunakawa, and A. Usui, phys. stat. sol. (a) 194(2), 554 (2002).
7. F. Yun, M. A. Reshchikov, K. Jones, P. Visconti, H. Morkoç, S. S. Park, and K. Y. Lee, Solid-State Electron. 44, 2225 (2000).
8. H. Miyake, M. Yamaguchi, T. Maeda, and I. Akasaki, MRS Internet J. Nitride Semicond. Res. 551, W2.3 (2000).