Synchrotron X-ray topography of undoped VCz GaAs crystals

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 I, 2002, Pages 350-355

  Tuomi, T ^a   Knuuttila, L ^a   Riikonen, J ^a   McNally, P J ^a   Chen, W M ^a   Kanatharana, J ^a   Neubert, M ^a   Rudolph, P ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

A1. Crystal structure; A1. Defects; A1. Etching; A1. X ray topography; A2. Liquid encapsulated Czochralski method; A2. Vapor pressure controlled Czochralski method; B1. Gallium compounds

Indexed keywords

CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SURFACE TOPOGRAPHY; SYNCHROTRON RADIATION; X RAY ANALYSIS;

X-RAY TOPOGRAPHY;

CRYSTAL GROWTH FROM MELT;

EID: 0036530549     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01938-8     Document Type: Conference Paper

References (17)

1. FREIBERGER moves VGF process into production