Modelling dislocation generation in high pressure Czochralski growth of InP single crystals: Part I. Construction of a visco-plastic deformation model

Modelling and Simulation in Materials Science and Engineering

Volumn 13, Issue 2, 2005, Pages 249-266

  Pendurti, S ^a   Prasad, V ^a   Zhang, H ^b  

^a The Department of Electrical and Computer Engineering   (United States)

^b Stony Brook University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; DEFORMATION; DISLOCATIONS (CRYSTALS); FINITE ELEMENT METHOD; HIGH PRESSURE EFFECTS; MATHEMATICAL MODELS; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN RATE; THERMAL EFFECTS; VISCOPLASTICITY;

CRITICAL RESOLVED SHEAR STRESS (CRSS); DEFORMATION TESTS; DISLOCATION DENSITIES; MULTI-SLIP DEFORMATION;

SINGLE CRYSTALS;

EID: 14844302646     PISSN: 09650393     EISSN: None     Source Type: Journal    
DOI: 10.1088/0965-0393/13/2/007     Document Type: Article

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