메뉴 건너뛰기




Volumn , Issue , 2003, Pages 359-362

Record efficiency and gain at 2.1GHz of high power RF transistors for cellular and 3G base stations

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR BASE STATIONS; THERMAL PERFORMANCE;

EID: 0842309799     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (38)

References (1)
  • 1
    • 0041663757 scopus 로고    scopus 로고
    • 200W Push-Pull & 110W Single-Ended High Performance RF-LDMOS Transistors for WCDMA Basestation Applications
    • Philadephia, Pennsylvania, June 8-13, TU3B-1
    • Chris Dragon, et al., "200W Push-Pull & 110W Single-Ended High Performance RF-LDMOS Transistors for WCDMA Basestation Applications," IEEE MTT-S Int. Microwave Symp. Dig., Philadephia, Pennsylvania, June 8-13, 2003, TU3B-1, pp. 69-72.
    • (2003) IEEE MTT-S Int. Microwave Symp. Dig. , pp. 69-72
    • Dragon, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.