High-performance Silicon-On-Glass VDMOS transistor for RF-power applications

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 379-382

  Nenadovic N ^a   Cuoco, V ^a   V D Heijden, M P ^a   Nanver, L K ^a   Slotboom, J W ^a   Theeuwe, S J C H ^b   Jos, H F F ^b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

MOS DEVICES; POWER AMPLIFIERS; SILICON;

1DB COMPRESSION POINT; DEVICE SIMULATIONS; INTEGRATED POWER AMPLIFIERS; LDMOS TRANSISTORS; RF POWER APPLICATIONS; SATURATION CURRENT; SPECIFIC-ON-RESISTANCE; VERTICAL DMOS TRANSISTORS;

GLASS;

EID: 84907697138     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194948     Document Type: Conference Paper

References (10)

1. H.F. Jos, in Proc. of the 28th European Microwave Conference, 1998, pp. 739-741.
2. A. Wood, et al., in IEDM Tech. Digest, 1996, pp. 87-90.
3. R. Dekker et al., in IEDM Tech. Digest, 1997, pp. 921-922.
4. L.K. Nanver et al., in Proc. IEEE BCTM, 1999, pp. 137-140.
5. S.Merchant et al., in Proc. IEEE BCTM, 1997, pp. 202-205.
6. S. Matsumoto et al., in Proc. ISPSD, 1995, pp. 460-465.
7. N.Nenadovic et al., in Proc. MIEL, 2002, pp. 159-162.
8. S. Xu et al., IEEE TED, Vol. 48, 2001, pp. 2168-2176.
9. V. Cuoco et al., to be published in MTT-S Dig., 2002.
10. Advanced Design System, Agilent Technologies, Santa Rosa, California, 2000.