Thermally stimulated current spectroscopy of carbon-doped GaN grown by molecular beam epitaxy

Materials Research Society Symposium - Proceedings

Volumn 798, Issue , 2003, Pages 521-526

  Fang, Z Q ^a   Look, D C ^a   Armitage, R ^b   Yang, Q ^b   Weber, E R ^b  

^a WRIGHT STATE UNIVERSITY   (United States)

^b University of California Berkeley   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARBON; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC INSULATING MATERIALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS;

DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS); SEMI-INSULATING (SI) GAN; THERMALLY STIMULATED CURRENT (TSC) SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 2942674773     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-798-y5.27     Document Type: Conference Paper

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