High-temperature illumination-induced metastability in undoped semi-insulating GaN grown by metalorganic vapor phase epitaxy

Materials Research Society Symposium - Proceedings

Volumn 743, Issue , 2002, Pages 749-754

  Fang, Z Q ^a   Claflin, B B ^a   Look, D C ^a   Myers, T H ^b   Koleske, D D ^c,d   Wickenden, A E ^c,e   Henry, R L ^c  

^a WRIGHT STATE UNIVERSITY   (United States)

^b WEST VIRGINIA UNIVERSITY   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

^d SANDIA NATIONAL LABORATORIES   (United States)

^e U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY (SPECIFIC GRAVITY); DISLOCATIONS (CRYSTALS); ELECTRON TRAPS; HIGH TEMPERATURE EFFECTS; LIGHTING; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOCURRENTS; POINT DEFECTS; SAPPHIRE; STABILITY;

HIGH TEMPERATURE ILLUMINATION INDUCED METASTABILITY; PERSISTENT PHOTOCURRENT MEASUREMENT; PHOTOCURRENT MEASUREMENT; THERMALLY STIMULATED CURRENT SPECTROSCOPY; UNDOPED SEMI INSULATING GALLIUM NITRIDE;

GALLIUM NITRIDE;

EID: 0038372160     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-743-l11.33     Document Type: Conference Paper

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