Erratum: Publisher's note; "Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy" (Applied Physics Letters (2003) 82 (3433))

Applied Physics Letters

Volumn 82, Issue 25, 2003, Pages 4611-

  Oila, J ^a   Kivioja, J ^a   Ranki, V ^a   Saarinen, K ^a   Look, D C ^b   Molnar, R J ^c   Park, S S ^d   Lee, S K ^d   Han, J Y ^d  

^a AALTO UNIVERSITY   (Finland)

^b WRIGHT STATE UNIVERSITY   (United States)

^c MIT LINCOLN LABORATORY   (United States)

^d Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038720639     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1589006     Document Type: Erratum

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