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Volumn 2000-January, Issue , 2000, Pages 51-54
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The properties of GaN films grown by plasma assisted laser-induced chemical vapour deposition, and the influence of heavy ion irradiation
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Author keywords
Chemical lasers; Chemical vapor deposition; Conductivity; Gallium nitride; Gold; Optical films; Particle beam optics; Plasma chemistry; Plasma properties; Silicon
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Indexed keywords
CHEMICAL LASERS;
CHEMICAL VAPOR DEPOSITION;
DEPOSITION;
ELECTRIC CONDUCTIVITY;
GALLIUM NITRIDE;
GOLD;
HEAVY IONS;
INSULATING MATERIALS;
ION BEAM ASSISTED DEPOSITION;
ION BOMBARDMENT;
SAPPHIRE;
SILICON;
VAPOR DEPOSITION;
CHEMICAL VAPOUR DEPOSITION;
ELASTIC RECOIL DETECTION;
MORPHOLOGICAL PROPERTIES;
PARTICLE BEAM OPTICS;
PLASMA CHEMISTRIES;
PLASMA PROPERTIES;
SILICON SUBSTRATES;
ULTRA-VIOLET LIGHT;
OPTICAL FILMS;
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EID: 84950137055
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/SIM.2000.939196 Document Type: Conference Paper |
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Times cited : (4)
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References (6)
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