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Journal of Applied Physics

Volumn 95, Issue 11 I, 2004, Pages 6406-6408

Radiation tolerance of Si/Si 0.6Ge 0.4 resonant interband tunneling diodes

(6) Weaver, B D a Thompson, P E a Jin, N b Chung, S Y b Rice, A T b Berger, P R b,c

a NAVAL RESEARCH LABORATORY (United States)

b The Ohio State University (United States)

c OHIO STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ESAKI DIODES; RADIATION TOLERANCES; RESONANT INTERBAND TUNNELING DIODES (RITD); VALLEY CURRENTS;

CURRENT VOLTAGE CHARACTERISTICS; ERROR ANALYSIS; MOLECULAR BEAM EPITAXY; NEUTRONS; PHOTOLITHOGRAPHY; PROTON IRRADIATION; RESONANT TUNNELING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SOLAR CELLS;

TUNNEL DIODES;

EID: 2942653023 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1710719 Document Type: Article

Times cited : (9)

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