Disorder effects in reduced dimension: Indium-phosphide-based resonant tunneling diodes

Journal of Applied Physics

Volumn 88, Issue 11, 2000, Pages 6951-6953

  Weaver, B D ^a   Jackson, E M ^b   Summers, G P ^a,c   Seabaugh, A C ^d,e  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SFA INC   (United States)

^c UNIVERSITY OF MARYLAND BALTIMORE COUNTY   (United States)

^d RAYTHEON COMPANY   (United States)

^e UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040675070     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1324680     Document Type: Article

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