Photoreflectance study on the surface states of n-type GaN

Semiconductor Science and Technology

Volumn 14, Issue 5, 1999, Pages 399-402

  Liu, W ^a   Li, M F ^a   Chua, S J ^a   Akutsu, N ^b   Matsumoto, K ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b TAIYO NIPPON SANSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NITRIDES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

GALLIUM NITRIDE; PHOTOREFLECTANCE SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032666904     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/5/004     Document Type: Article

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