Oxygen-transport phenomena in a small silicon Czochralski furnace

Journal of Crystal Growth

Volumn 267, Issue 3-4, 2004, Pages 466-474

  Li, You Rong ^a   Li, Ming Wei ^a   Imaishi, Nobuyuki ^b   Akiyama, Yasunobu ^b   Tsukada, Takao ^c  

^a CHONGQING UNIVERSITY   (China)

^b KYUSHU UNIVERSITY   (Japan)

^c Ins Multidisc Res for Adv Mat   (Japan)

Author keywords

A1. Computer simulation; A1. Fluid flow; A1. Heat transfer; A1. Mass transfer; A2. Czochralski method; B2. Diffusivity; B2. Finite element method; B2. Oxygen transport; B2. Semiconducting silicon

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; EVAPORATION; FINITE ELEMENT METHOD; FLOW OF FLUIDS; FLOW PATTERNS; HEAT TRANSFER; MASS TRANSFER; MATHEMATICAL MODELS; OXYGEN; REYNOLDS NUMBER; SEMICONDUCTING SILICON; VAPOR PRESSURE;

CZOCHRALSKI METHOD; DIFFUSIVITY; MARANGONI EFFECT; OXYGEN TRANSPORT;

METALLURGICAL FURNACES;

EID: 2942607410     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.049     Document Type: Article

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