The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski-grown silicon crystals

Journal of Crystal Growth

Volumn 186, Issue 3, 1998, Pages 362-368

  Machida, Norihisa ^a,c   Suzuki, Youji ^a   Abe, Keisei ^a   Ono, Naoki ^a   Kida, Michio ^a   Shimizu, Yasuo ^b  

^a MITSUBISHI MATERIALS CORPORATION   (Japan)

^b SHINSHU UNIVERSITY   (Japan)

^c NONE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CONTROL EQUIPMENT; OXYGEN; PRESSURE EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACES; VELOCITY;

FURNACE PRESSURE; GAS FLOW RATE;

CRYSTAL GROWTH FROM MELT;

EID: 0032473196     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00491-0     Document Type: Article

References (12)

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