Oxygen transport mechanism in Si melt during single crystal growth in the Czochralski system

Journal of Crystal Growth

Volumn 165, Issue 4, 1996, Pages 358-361

  Yi, Kyung Woo ^a   Kakimoto, Koichi ^a   Eguchi, Minoru ^a   Noguchi, Hiroshi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRUCIBLES; HEAT CONVECTION; INTERFACES (MATERIALS); LIQUID METALS; OXYGEN; SILICON; SINGLE CRYSTALS; THREE DIMENSIONAL; TRANSPORT PROPERTIES;

CARBON SHEET; CRUCIBLE ROTATION RATE; CRYSTAL MELT INTERFACE; GAS MELT INTERFACE; OXYGEN TRANSPORT MECHANISM; SILICON MELT;

CRYSTAL GROWTH FROM MELT;

EID: 0030564776     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00212-6     Document Type: Article

References (10)

1. W. Zulehner, J. Crystal Growth 65 (1983) 189.
2. G.K. Teal and J.B. Little, Phys. Rev. 78 (1950) 647.
3. J.R. Curruthers, A.F. Witt and R.E. Reusser, Semiconductor Silicon, Eds. H.R. Huff and E. Sirtl (The Electrochemical Society, Princeton, NJ, 1977) p. 61.
4. A. Murgai, H.C. Gatos and A.F. Witt, Semiconductor Silicon, Eds. H.R. Huff and E. Sirtl (The Electrochemical Society, Princeton, NJ, 1977) p. 72.
5. J.R. Carruthers and K. Nassau, J. Appl. Phys. 39 (1968) 5205.
6. D.S. Robertson, J. Appl. Phys. 17 (1966) 1047.
7. K. Kakimoto, J. Appl. Phys. 77 (1995) 1827.
8. K. Kakimoto, M. Watanabe, M. Eguchi and T. Hibiya, Int. J. Heat Mass Transfer 10 (1992) 2551.
9. K.-W. Yi, K.K. Kakimoto, M. Eguchi, M. Watanabe, T. Syo and T. Hibiya, J. Crystal Growth 144 (1994) 20.
10. H. Hirata and K. Hoshikawa, J. Crystal Growth 106 (1990) 657.