Oxygen transfer during single silicon crystal growth in Czochralski system with vertical magnetic fields

Journal of Crystal Growth

Volumn 163, Issue 3, 1996, Pages 238-242

  Kakimoto, Koichi ^a   Yi, Kyung Woo ^a   Eguchi, Minoru ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; COMPUTER SIMULATION; HEAT CONVECTION; MAGNETIC FIELDS; OXYGEN; SEMICONDUCTING SILICON; THERMAL EFFECTS; THREE DIMENSIONAL; TRANSPORT PROPERTIES;

BENARD CELL; BENARD INSTABILITY; INFRARED ABSORPTION TECHNIQUE; MELT CONVECTION; OXYGEN TRANSFER; SILICON CRYSTAL GROWTH;

CRYSTAL GROWTH FROM MELT;

EID: 0030164959     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00976-0     Document Type: Article

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