Effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski silicon single crystals grown in a transverse magnetic field

Journal of Crystal Growth

Volumn 210, Issue 4, 2000, Pages 532-540

  Machida, Norihisa ^a   Hoshikawa, Keigo ^b   Shimizu, Yasuo ^b  

^a MITSUBISHI MATERIALS CORPORATION   (Japan)

^b SHINSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; FLOW OF FLUIDS; MAGNETIC FIELD EFFECTS; OXYGEN; SEMICONDUCTING SILICON; SINGLE CRYSTALS;

FURNACE PRESSURE; GAS FLOW RATE; TRANSVERSE MAGNETIC FIELD;

CRYSTAL GROWTH FROM MELT;

EID: 0033903304     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00516-3     Document Type: Article

References (10)

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