The temperature evolution of ultra-thin films in solid-phase reaction of Co with Si (111) studied by scanning tunneling microscopy

Surface Science

Volumn 414, Issue 1-2, 1998, Pages 279-289

  Ilge, B ^a   Palasantzas, G ^a   De Nijs, J ^a   Geerligs, L J ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Epitaxy; Growth; Scanning tunneling microscopy; Silicides; Solid phase epitaxy

Indexed keywords

ANNEALING; COBALT; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; DEPOSITION; EPITAXIAL GROWTH; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE; THERMAL EFFECTS; ULTRATHIN FILMS;

SOLID-PHASE EPITAXY;

SILICON;

EID: 0032165197     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00528-7     Document Type: Article

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