Thermally-induced evolution of codeposited Co-Si layers on Si(100) surfaces

Surface Science

Volumn 365, Issue 2, 1996, Pages 403-410

  Rangelov, G ^a   Fauster, Th ^a,b  

^a MAX PLANCK INSTITUT FÜR PLASMAPHYSIK   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Low energy electron diffraction (LEED); Metal semiconductor interfaces; Silicides; Single crystal epitaxy; Soft X ray photoelectron spectroscopy

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; AUGER ELECTRON SPECTROSCOPY; COBALT COMPOUNDS; EPITAXIAL GROWTH; EVAPORATION; LOW ENERGY ELECTRON DIFFRACTION; STOICHIOMETRY; SURFACES; SYNCHROTRON RADIATION; THERMAL EFFECTS; ULTRATHIN FILMS;

ADAMANTANE DISILICIDE; PHOTOEMISSION SPECTROSCOPY;

SILICON;

EID: 0030243904     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00735-2     Document Type: Article

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