Epitaxial and oriented YMnO3 film growth by pulsed laser deposition

Journal of Crystal Growth

Volumn 267, Issue 3-4, 2004, Pages 548-553

  Dho, J ^a   Leung, C W ^a   MacManus Driscoll, J L ^a   Blamire, M G ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

A1. X ray diffraction; A3. Laser epitaxy; B1. Oxides; B2. Dielectric materials

Indexed keywords

AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; EPITAXIAL GROWTH; FILM GROWTH; PULSED LASER DEPOSITION; SURFACE STRUCTURE; TENSILE STRESS; X RAY DIFFRACTION; YTTRIUM COMPOUNDS;

LASER EPITAXY; OXYGEN PRESSURE; PARAELECTRIC-FERROELECTRIC TRANSITION;

THIN FILMS;

EID: 2942522575     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.028     Document Type: Article

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