Characteristics of Pt/YMnO3/Y2O3/Si structure using a Y2O3 buffer layer grown by pulsed laser deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 1, 2001, Pages 239-243

  Shin, Woong Chul ^a   Yang, Jung Hwan ^a   Choi, Kyu Jeong ^a   Jeon, Young Ah ^a   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; STOICHIOMETRY; THERMAL EFFECTS; THIN FILMS; YTTRIUM COMPOUNDS;

BUFFER LAYERS; CRYSTALLINITY; METAL FERROELECTRIC INSULATOR SEMICONDUCTOR (MFIS) TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 0035081878     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1343102     Document Type: Article

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