메뉴 건너뛰기




Volumn 2, Issue , 2003, Pages 524-527

GP based transistor sizing for optimal design of nanoscale CMOS inverter

Author keywords

Accuracy; Capacitance; CMOS technology; Delay; Frequency; Inverters; Predictive models; Semiconductor device modeling; Solid modeling; SPICE

Indexed keywords

CAPACITANCE; CIRCUIT SIMULATION; CMOS INTEGRATED CIRCUITS; ELECTRIC INVERTERS; GEOMETRY; INTEGRATED CIRCUIT DESIGN; MATHEMATICAL PROGRAMMING; NANOTECHNOLOGY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SPICE;

EID: 29144512584     PISSN: 19449399     EISSN: 19449380     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2003.1230962     Document Type: Conference Paper
Times cited : (7)

References (16)
  • 3
    • 0025415048 scopus 로고
    • Alpha power law MOSFET model and its applications to CMOS inverter delay and other formulas
    • April
    • T. Sakurai and A. R. Newton, :Alpha power law MOSFET model and its applications to CMOS inverter delay and other formulas", IEEE Journal of Solid State Circuits, Vol. 25, pp. 584-594, April 1990.
    • (1990) IEEE Journal of Solid State Circuits , vol.25 , pp. 584-594
    • Sakurai, T.1    Newton, A.R.2
  • 4
    • 0035309841 scopus 로고    scopus 로고
    • Analytical charge control and I-V model for submicrometer and deep sub micrometer MOSFETs fully comprising quantum mechanical effects
    • April
    • Yutao Ma et al. "Analytical charge control and I-V model for submicrometer and deep sub micrometer MOSFETs fully comprising quantum mechanical effects", IEEE Trans on. Computer-Aided Design, April 2001, Vol. 20, No.4, pp. 495-502.
    • (2001) IEEE Trans on. Computer-Aided Design , vol.20 , Issue.4 , pp. 495-502
    • Ma, Y.1
  • 8
    • 0036494049 scopus 로고    scopus 로고
    • A Compact Scattering Model for the Nanoscale Double-Gate MOSFET
    • March
    • A. Rahman and Mark S. Lundstrom, "A Compact Scattering Model for the Nanoscale Double-Gate MOSFET," IEEETrans. Electron Devices, March 2002, vol. 49, pp. 481-489.
    • (2002) IEEETrans. Electron Devices , vol.49 , pp. 481-489
    • Rahman, A.1    Lundstrom, M.S.2
  • 9
    • 0036253371 scopus 로고    scopus 로고
    • Essential Physics of Carrier Transport in Nanoscale MOSFETs
    • Jan
    • M. Lundstrom, Z. Ren and S. Dutta, "Essential Physics of Carrier Transport in Nanoscale MOSFETs,"IEEE Trans. Electron Devices, Jan 2002, vol. 49, pp. 133-141.
    • (2002) IEEE Trans. Electron Devices , vol.49 , pp. 133-141
    • Lundstrom, M.1    Ren, Z.2    Dutta, S.3
  • 11
    • 0027701389 scopus 로고
    • An exact solution to the transistor sizing problem for CMOS circuits using convex optimization
    • Nov.
    • S. S. Sapatnekar, V. B. Rao, P. M. Vaidya, and S. M. Kang, "An exact solution to the transistor sizing problem for CMOS circuits using convex optimization," IEEE Trans. on Computer-Aided Design, Nov. 1993, Vol. 12, pp. 1621-1634.
    • (1993) IEEE Trans. on Computer-Aided Design , vol.12 , pp. 1621-1634
    • Sapatnekar, S.S.1    Rao, V.B.2    Vaidya, P.M.3    Kang, S.M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.