Two-dimensional electron gas materials with AlN/GaN superlattice structure grown by radio-frequency plasma-assisted molecular beam epitaxy

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 24, Issue 6, 2003, Pages 602-605

  Hu, Guoxin ^a   Wang, Xiaoliang ^a   Sun, Dianzhao ^a   Wang, Junxi ^a   Liu, Hongxin ^a   Liu, Chenghai ^a   Zeng, Yiping ^a   Li, Jinmin ^a   Lin, Lanying ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

2DEG; AlGaN GaN; HFET; RF MBE

Indexed keywords

ALUMINUM NITRIDE; ELECTRON GAS; FILMS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; PLASMAS; SUPERLATTICES; TWO DIMENSIONAL;

ELECTRON CONCENTRATION; ELECTRON GAS MATERIALS;

SEMICONDUCTOR MATERIALS;

EID: 0042318457     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

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