Rigorous simulation of line-defects in extreme UV masks

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 9 A, 2005, Pages 6810-6816

  Schiavone, Patrick ^a   Payerne, Renaud ^a  

^a CEA GRENOBLE   (France)

Author keywords

Defect; EUV lithography; Mask; Multilayer; Rigorous electromagnetic model; Simulation

Indexed keywords

COMPUTER SIMULATION; DEFECTS; MIRRORS; MULTILAYERS; POLARIZATION; ULTRAVIOLET RADIATION;

EUV LITHOGRAPHY; RIGOROUS ELECTROMAGNETIC MODEL;

MASKS;

EID: 29044446250     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.6810     Document Type: Article

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