Hot carrier degradation on n-channel HfSiON MOSFETs: Effects on the device performance and lifetime

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 275-279

  Cimino, S ^a   Pantisano, L ^b   Aoulaiche, M ^b,c   Degraeve, R ^b   Kwak, D H ^d   Crupi, F ^e   Groeseneken, G ^b,c   Paccagnella, A ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d SAMSUNG Electronics   (South Korea)

^e UNIVERSITY OF CALABRIA   (Italy)

Author keywords

Alternative gate dielectrics; Bulk defects; Hot carrier stress; Lifetime

Indexed keywords

ALTERNATIVE GATE DIELECTRICS; BULK DEFECTS; HOT CARRIER STRESS; LIFETIME;

DEGRADATION; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; HOT CARRIERS; OXIDES; POLYSILICON;

MOSFET DEVICES;

EID: 28844452981     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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