Effects of silicon carbide composition on dielectric barrier Voltage Ramp and TDDB reliability performance

Proceedings of the IEEE 2003 International Interconnect Technology Conference, IITC 2003

Volumn , Issue , 2003, Pages 45-47

  Tsui, T Y ^a   Willecke, R ^a   McKerrow, A J ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

Copper; Dielectric breakdown; Moisture; Nitrogen; Oxygen; Semiconductor films; Silicon carbide; Temperature; Testing; Voltage

Indexed keywords

COPPER; DIELECTRIC FILMS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; FILMS; INTEGRATED CIRCUIT INTERCONNECTS; MATERIALS PROPERTIES; METAL TESTING; MOISTURE; NITROGEN; OXYGEN; SILICON; SILICON CARBIDE; SILICON NITRIDE; TEMPERATURE; TESTING;

DIELECTRIC BARRIER; ELEVATED TEMPERATURE; METAL COPPER; MOISTURE BARRIERS; RELIABILITY PERFORMANCE; SEMICONDUCTOR FILMS; SILICON CARBIDE FILMS; VOLTAGE RAMP;

SEMICONDUCTING SILICON;

EID: 0842286058     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2003.1219708     Document Type: Conference Paper

References (4)

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4. B. van Schravendijk, A.S. Harrus, G. Delgado, B. Sparks and C. Roberts, 1992 VMIC Conference, 1992, 372-378.